Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)
T. Slobodskyy, C. R\"uster, R. Fiederling, D. Keller, C. Gould, W., Ossau, G. Schmidt, and L. W. Molenkamp
TL;DR
This study demonstrates the successful growth of high-quality (Zn,Mn)Se diluted magnetic semiconductor films on Si(100) substrates using molecular-beam epitaxy, highlighting optimized low-temperature growth and notable optical properties.
Contribution
First demonstration of (Zn,Mn)Se epitaxial growth on Si(100) with optimized low-temperature conditions and detailed optical characterization.
Findings
High crystalline quality of (Zn,Mn)Se films
Giant Zeeman splitting of up to 30 meV observed
Surface properties confirmed by microscopy
Abstract
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.
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