Electric Field Modulation of Galvanomagnetic Properties of Mesoscopic Graphite

TL;DR

This study demonstrates electric field control over galvanomagnetic properties in mesoscopic graphite, revealing significant modulation of magneto-resistance, Hall resistance, and Landau level formation, with measurements of carrier effective mass.

Contribution

It introduces electric field modulation techniques for mesoscopic graphite, providing new insights into its galvanomagnetic behavior and carrier properties.

Findings

Magneto-resistance and Hall resistance are strongly modulated by gate voltage.

Landau level formation is observed via Shubnikov de Haas oscillations.

Carrier effective masses are measured from temperature dependence of oscillations.

Abstract

Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magneto-resistance and Hall resistance as a function of gate voltage is observed as sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov de Haas oscillations in magneto-resistance. The effective mass of electron and hole carriers has been measured from the temperature dependant behavior of these oscillations.