Spin-dependent resonant tunneling in symmetrical double-barrier structure

TL;DR

This paper presents a theoretical study of spin-dependent resonant tunneling in symmetrical double-barrier semiconductor structures, highlighting effects like spin polarization and in-plane current generation due to spin-orbit coupling.

Contribution

It develops a new theory for spin-dependent tunneling in non-centrosymmetrical semiconductors, revealing how spin orientation affects tunneling transparency and current.

Findings

Spin polarization of transmitted carriers in an electric field

Generation of in-plane electric current from spin-polarized tunneling

Effects due to spin-orbit coupling-induced level splitting

Abstract

A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.