Instability toward biexciton crystallization in one-dimensional electron-hole systems
Kenichi Asano, Tetsuo Ogawa

TL;DR
This paper investigates high-density 1D electron-hole systems and finds they remain insulating with a strong tendency to form biexciton crystals, defying the expected Mott transition at zero temperature.
Contribution
It reveals that 1D electron-hole systems are inherently insulating and unstable towards biexciton crystallization, challenging previous assumptions about the Mott transition.
Findings
Systems are insulating even at high densities
No Mott transition occurs at zero temperature
Strong instability towards biexciton crystallization
Abstract
One-dimensional (1D) electron-hole (e-h) systems in a high-density regime is investigated by means of bozonization techniques. It turned out that the systems are insulating even at the high density limit and that the exciton Mott transition (insulator-to-metal transition) never occurs at absolute zero temperature. The insulating ground state exhibits a strong instability towards the crystallization of biexcitons.
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