Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ interface

TL;DR

This study investigates the hysteretic current-voltage behavior and resistance switching at a Ti/PrCaMnO interface, revealing reversible resistance states modulated by pulsed voltage, linked to Schottky barrier modifications.

Contribution

It introduces a model explaining resistance switching via barrier modifications caused by trapped charges at the Ti/PCMO interface.

Findings

Ti/PCMO/SRO exhibits rectifying I-V with hysteresis.

Resistance at the interface switches reversibly with pulsed voltage.

Barrier modifications are linked to trapped charge carriers.

Abstract

We have characterized the vertical transport properties of epitaxial layered structures composed of Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (PCMO) sandwiched between SrRuO$_{3}$ (SRO) bottom electrode and several kinds of top electrodes such as SRO, Pt, Au, Ag, and Ti. Among the layered structures, Ti/PCMO/SRO is distinct due to a rectifying current-voltage ($I$--$V$) characteristic with a large hysteresis. Corresponding to the hysteresis of the $I$--$V$ characteristics, the contact resistance of the Ti/PCMO interface reversibly switches between two stable states by applying pulsed voltage stress. We propose a model for the resistance switching at the Ti/PCMO interface, in which the width and/or height of a Schottky-like barrier are altered by trapped charge carriers in the interface states.