Spin susceptibility of two dimensional hole gases in GaAs/AlGaAs heterostructures

TL;DR

This study measures the spin susceptibility of two-dimensional hole gases in GaAs/AlGaAs heterostructures, revealing an enhancement over bulk values that increases at lower densities, aligning qualitatively with theoretical predictions.

Contribution

First experimental measurement of spin susceptibility in 2D hole gases in GaAs/AlGaAs, showing density-dependent enhancement consistent with Quantum Monte Carlo calculations.

Findings

Spin susceptibility is enhanced over bulk values.

Enhancement factor increases from 2.8 to 4.8 as density decreases.

Results agree qualitatively with theoretical models.

Abstract

We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic field. We observed an enhancement of the spin susceptibility over the bulk value that increases as the density is decreased in qualitative agreement with Quantum Monte Carlo calculations. The measured enhancement factor increases from 2.8 to 4.8 as the hole density is decreased.