Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions

TL;DR

This paper reports on a manganite-titanate heterojunction that exhibits large magnetocapacitance and exponential magnetoresistance, revealing magnetic field effects on the depletion layer and junction properties in strongly correlated materials.

Contribution

It demonstrates magnetic field tunable depletion and magnetoresistance effects in a Mott insulator/band insulator heterojunction, providing new insights into their electronic properties.

Findings

Large positive magnetocapacitance observed.

Exponential enhancement of differential magnetoresistance.

Magnetic field influences depletion width and junction behavior.

Abstract

We present a rectifying manganite-titanate heterojunction exhibiting a magnetic field tunable depletion layer. This creates a large positive magnetocapacitance, a direct measure of the field-induced reduction of the effective depletion width across the junction. Furthermore, the reduction of the junction barrier shifts the forward bias characteristics, giving exponentially-enhanced differential magnetoresistance, occurring despite the absence of a spin filter. These results provide a unique probe of a Mott insulator/band insulator interface, and further suggest new electronic devices incorporating the magnetic field sensitivity of these strongly correlated electron materials.