Low temperature ferromagnetic properties of the diluted magnetic semiconductor Sb2-xCrxTe3

TL;DR

This study investigates the ferromagnetic and electrical properties of Sb2-xCrxTe3 single crystals, revealing low-temperature ferromagnetism with Curie temperatures up to 20 K, and identifies Cr as a 3+ valence state substituting Sb.

Contribution

It demonstrates ferromagnetism in Sb2-xCrxTe3 with Curie temperatures proportional to Cr concentration, expanding understanding of ferromagnetic behavior in V2-VI3 DMS materials.

Findings

Curie temperature reaches 20 K at x=0.095

Cr adopts a 3+ valence state substituting Sb

Skew scattering causes anomalous Hall effect

Abstract

We report on magnetic and electrical transport properties of Sb2-xCrxTe3 single crystals with 0 <= x <= 0.095 over temperatures from 2 K to 300 K. A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x > 0.014), attaining a maximum value of 20 K for x = 0.095. Hysteresis below TC for applied field parallel to the c-axis is observed in both magnetization and Hall effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3d3) valence state, substituting for antimony in the host lattice structure, and does not significantly affect the background hole concentration. Analysis of the anomalous Hall effect reveals that skew scattering is responsible for its presence. These results broaden the scope of ferromagnetism in the V2-VI3 diluted magnetic semiconductors (DMS) and in ferromagnetic DMS structures generally