Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures
G.M.Minkov, A.A.Sherstobitov, A.V.Germanenko, O.E.Rut, V.A.Larionova,, and B.N.Zvonkov
TL;DR
This paper investigates the effects of spin-orbit coupling and antilocalization in strained GaAs/InGaAs/GaAs quantum wells, demonstrating the role of Rashba mechanism and modeling magnetoresistance behavior.
Contribution
It provides experimental analysis and theoretical modeling of low-field magnetoresistance, highlighting the cubic spin-orbit splitting due to Rashba effect in hole quantum wells.
Findings
Rashba mechanism causes cubic in quasimomentum spin-orbit splitting.
Antilocalization behavior is well described by Hikami-Larkin-Nagaoka expression.
Magnetoresistance measurements confirm the influence of spin-orbit coupling.
Abstract
Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of low-field magnetoresistance is well described by the Hikami-Larkin-Nagaoka expression.
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