Novel Reconfigurable Logic Gates Using Spin Metal-Oxide-Semiconductor Field-Effect Transistors

TL;DR

This paper introduces and numerically demonstrates reconfigurable logic gates based on spin MOSFETs, which change their logic function by altering the magnetization configuration of ferromagnetic contacts, enabling flexible Boolean operations.

Contribution

It presents a novel design for reconfigurable logic gates using spin MOSFETs, allowing dynamic switching of logic functions through magnetization states, verified by numerical simulations.

Findings

Reconfigurable NAND/NOR gates achieved with spin MOSFETs.

Logic functions switchable by changing ferromagnetic contact magnetization.

All symmetric Boolean functions implementable with five CMOS inverters.

Abstract

We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization configuration of the ferromagnetic contacts for the source and drain, that is, high current-drive capability in the parallel magnetization and low current-drive capability in the antiparallel magnetization [S. Sugahara and M. Tanaka: Appl. Phys. Lett. 84 (2004) 2307]. A reconfigurable NAND/NOR logic gate can be realized by using a spin MOSFET as a driver or an active load of a complimentary MOS (CMOS) inverter with a neuron MOS input stage. Its logic function can be switched by changing the relative magnetization configuration of the ferromagnetic source and drain of the spin MOSFET. A reconfigurable logic gate for all symmetric Boolean functions can be configured using only five CMOS inverters including four spin MOSFETs. The operation of these reconfigurable logic gates was confirmed by numerical simulations using a simple device model for the spin MOSFETs