Hole spin relaxation in semiconductor quantum dots

TL;DR

This paper investigates hole spin relaxation times in GaAs quantum dots, considering various physical effects, and highlights differences from electron spin relaxation mechanisms in similar nanostructures.

Contribution

It provides a detailed analysis of hole spin relaxation in quantum dots, including the effects of strain, magnetic field, and geometry, using exact diagonalization of the Luttinger Hamiltonian.

Findings

Strain and magnetic field significantly influence hole spin relaxation times.

Distinct features from electron spin relaxation are identified and explained.

Temperature and quantum dot dimensions affect relaxation dynamics.

Abstract

Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width and the temperature on the spin relaxation time are investigated thoroughly. Many features which are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated.