Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As
T. Figielski, T. Wosinski, O. Pelya, J. Sadowski, A. Morawski, A., Makosa, W. Dobrowolski, R. Szymczak, and J. Wrobel
TL;DR
This study investigates how nanoconstrictions in (Ga,Mn)As affect magnetoresistance, revealing domain wall effects that influence weak localization and conductance jumps, advancing understanding of spintronic properties in ferromagnetic semiconductors.
Contribution
It demonstrates the impact of domain wall nucleation on magnetotransport in (Ga,Mn)As nanoconstrictions, highlighting new conductance features linked to magnetic hysteresis.
Findings
Negative magnetoresistance due to weak localization at low temperatures.
Conductance jumps associated with domain wall nucleation.
Suppression of weak localization caused by domain walls.
Abstract
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL) effects at the lowest temperatures. In constricted samples, additionally, jumps of an enhanced conductance appear on the background of the negative MR, whose positions reflect the hysteresis of magnetization. We argue that they are manifestation of a suppression of WL due to the nucleation of a domain wall in the constriction
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Taxonomy
TopicsSemiconductor materials and interfaces · Advancements in Semiconductor Devices and Circuit Design · GaN-based semiconductor devices and materials