Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

TL;DR

This paper demonstrates a significant tunneling anisotropic magnetoresistance (TAMR) effect in (Ga,Mn)As nanoconstrictions, highlighting its origin from spin-orbit coupling and its potential presence in other materials with similar anisotropic magnetoresistance.

Contribution

The study shows that TAMR is a generic effect arising from spin-orbit coupling in ferromagnets, not limited to specific device designs, and links TAMR directly to normal AMR in lateral geometries.

Findings

Large TAMR observed in (Ga,Mn)As nanoconstrictions.

TAMR effect is linked to spin-orbit coupling and normal AMR.

Potential for observing TAMR in other materials with similar AMR at room temperature.

Abstract

We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a ferromagnet and is not specific to a particular tunnel device design. The lateral geometry allows us to link directly normal anisotropic magnetoresistance (AMR) and TAMR. This indicates that TAMR may be observable in other materials showing a comparable AMR at room temperature, such as transition metal alloys.