Coupling of spontaneous emission from GaN/AlN quantum dots into silver surface plasmons

TL;DR

This study demonstrates that coupling GaN/AlN quantum dots to silver surface plasmons significantly enhances their spontaneous emission rate in the ultraviolet range, with potential implications for optoelectronic devices.

Contribution

It provides experimental evidence of surface-plasmon induced emission rate enhancement in GaN/AlN quantum dots at UV wavelengths, a novel observation in this material system.

Findings

Recombination rate increased 3-7 times with plasmon coupling

Enhancement depends on emission wavelength and silver thickness

Surface plasmon coupling modifies spontaneous emission dynamics

Abstract

We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and continuous-wave photoluminescence measurements, the recombination rate in AlN/GaN QD is shown to be enhanced when spontaneous emission is resonantly coupled to a metal-surface plasmon mode. The exciton recombination process via Ag-surface plasmon modes is observed to be as much as 3-7 times faster than in normal QD spontaneous emission and depends strongly on the emission wavelength and silver thickness.