Modelling of Statistical Low-Frequency Noise of Deep-Submicron MOSFETs
Gilson I Wirth, Jeongwook Koh, Roberto da Silva, Roland Thewes, and, Ralf Brederlow
TL;DR
This paper presents a new physics-based statistical model for low-frequency noise in deep-submicron MOSFETs, accounting for device parameter variations and suitable for circuit simulation.
Contribution
It introduces a novel modeling approach that incorporates statistical effects into LF-noise modeling of deep-submicron MOSFETs, enabling more accurate circuit simulations.
Findings
Model captures statistical fluctuations in LF-noise behavior.
Model is compatible with existing circuit simulation tools.
Experimental validation shows improved accuracy over previous models.
Abstract
The low-frequency noise (LF-noise) of deep submicron MOSFETs is experimentally studied with special emphasis on yield relevant parameter scattering. A novel modeling approach is developed which includes detailed consideration of statistical effects. The model is based on device physics-based parameters which cause statistical fluctuations in LF-noise behavior of individual devices. It can easily be implemented in a compact model for use in circuit simulation tools.
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