A Review of Liquid Phase Epitaxial Grown Gallium Arsenide

TL;DR

This paper reviews the development and application of liquid phase epitaxy for gallium arsenide, highlighting its historical evolution and recent advancements in semiconductor radiation detector manufacturing.

Contribution

It provides a comprehensive review of LPE GaAs from historical origins to recent industrial applications, including new growth data from ANSTO.

Findings

LPE GaAs is crucial for wide bandgap semiconductor radiation detectors.

The process has evolved significantly since its origins in 1836.

Recent growth studies at ANSTO demonstrate ongoing advancements.

Abstract

Liquid phase epitaxy of gallium arsenide (LPE GaAs) has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, it is interesting to note that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. This is followed by a report on LPE GaAs growth at the Australian Nuclear Science and Technology Organisation (ANSTO).