A Two-Region Diffusion Model for Current-Induced Instabilities of Step Patterns on Vicinal Si(111) Surfaces
T. Zhao, J. D. Weeks

TL;DR
This paper introduces a two-region diffusion model to analyze current-induced step instabilities on vicinal Si(111) surfaces, revealing new insights into step bunching and wandering phenomena driven by local surface reconstruction differences.
Contribution
The study develops a novel two-region diffusion model that captures local surface reconstruction effects and maps these to traditional models, providing a physical basis for current-induced instabilities.
Findings
Negative kinetic coefficient when diffusion in step region exceeds terrace diffusion
Step wandering driven by step edge diffusion, not Mullins-Sekerka instability
Numerical simulations match experimental step pattern alignments
Abstract
We study current-induced step bunching and wandering instabilities with subsequent pattern formations on vicinal surfaces. A novel two-region diffusion model is developed, where we assume that there are different diffusion rates on terraces and in a small region around a step, generally arising from local differences in surface reconstruction. We determine the steady state solutions for a uniform train of straight steps, from which step bunching and in-phase wandering instabilities are deduced. The physically suggestive parameters of the two-region model are then mapped to the effective parameters in the usual sharp step models. Interestingly, a negative kinetic coefficient results when the diffusion in the step region is faster than on terraces. A consistent physical picture of current-induced instabilities on Si(111) is suggested based on the results of linear stability analysis. In…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
