Piezo-Magneto-Electric Effects in p-Doped Semiconductors

TL;DR

This paper predicts a uniform magnetization in strained p-doped semiconductors with inversion symmetry breaking under an electric field, offering a new way to control magnetic properties in such materials.

Contribution

It introduces the theoretical prediction of electric-field-induced magnetization in strained p-doped semiconductors with inversion symmetry breaking.

Findings

Magnetization appears in strained p-doped semiconductors under electric fields.

Magnetization depends on strain magnitude and direction.

Potential application in manipulating ferromagnetic properties.

Abstract

We predict the appearance of a uniform magnetization in strained three dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.