High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films
Nikoleta Theodoropoulou (1), Vinith Misra (1), John Philip (1),, Patrick LeClair (1), Geetha P. Berera (1), Jagadeesh S. Moodera (1), Biswarup, Satpati (2), Tapobrata Som (2) ((1) Francis Bitter Magnet Lab,, Massachusetts Institute of Technology Cambridge
TL;DR
This paper reports the observation of room-temperature ferromagnetism and spin-polarized charge carriers in ZnMnO thin films, with magnetic properties influenced by Mn concentration and growth conditions, marking a significant advancement in magnetic semiconductors.
Contribution
It provides the first clear evidence of high-temperature ferromagnetism and spin polarization in ZnMnO thin films with record magnetic moments for Mn-doped semiconductors.
Findings
Ferromagnetism observed above 400 K.
Magnetic moment of 4.8 μB/Mn at 350 K.
Spin-polarized electrons confirmed by anomalous Hall effect.
Abstract
Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin polarized and participate in the observed ferromagnetic behavior.
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Taxonomy
TopicsZnO doping and properties