Weak Localization Thickness Measurements of Si:P Delta-Layers

TL;DR

This paper introduces a novel electrical transport measurement technique using weak localization analysis to accurately determine the thickness of Si:P delta-layers, potentially surpassing existing methods like SIMS in precision.

Contribution

The study demonstrates that weak localization analysis of magnetotransport data can precisely measure delta-layer thickness and estimate phosphorus diffusivity in silicon.

Findings

Weak localization analysis provides accurate delta-layer thickness measurements.

The method estimates phosphorus diffusivity in silicon.

Potential for higher precision than secondary ion mass spectrometry.

Abstract

We report on our results for the characterization of Si:P delta-layers grown by low temperature molecular beam epitaxy. Our data shows that the effective thickness of a delta-layer can be obtained through a weak localization analysis of electrical transport measurements performed in perpendicular and parallel magnetic fields. An estimate of the diffusivity of phosphorous in silicon is obtained by applying this method to several samples annealed at 850 Celsius for intervals of zero to 15 minutes. With further refinements, this may prove to be the most precise method of measuring delta-layer widths developed to date, including that of Secondary Ion Mass Spectrometry analysis.