Spin Dynamics and Spin Transport

TL;DR

This paper reviews how spin-orbit interaction affects electron spin dynamics and transport in semiconductors, emphasizing electric field manipulation and the complexities of spin behavior in microstructures.

Contribution

It provides a comprehensive analysis of spin coupling mechanisms, especially electric dipole spin resonance, and discusses the interplay of various parameters influencing spin transport.

Findings

EDSR is more efficient than magnetic manipulation.

Spin transport is governed by multiple competing parameters.

Transient effects are crucial for spin magnetization and ballistic transport.

Abstract

Spin-orbit (SO) interaction critically influences electron spin dynamics and spin transport in bulk semiconductors and semiconductor microstructures. This interaction couples electron spin to dc and ac electric fields. Spin coupling to ac electric fields allows efficient spin manipulating by the electric component of electromagnetic field through the electric dipole spin resonance (EDSR) mechanism. Usually, it is much more efficient than the magnetic manipulation due to a larger coupling constant and the easier access to spins at a nanometer scale. The dependence of the EDSR intensity on the magnetic field direction allows measuring the relative strengths of the competing SO coupling mechanisms in quantum wells. Spin coupling to an in-plane electric field is much stronger than to a perpendicular field. Because electron bands in microstructures are spin split by SO interaction, electron spin is not conserved and spin transport in them is controlled by a number of competing parameters, hence, it is rather nontrivial. The relation between spin transport, spin currents, and spin populations is critically discussed. Importance of transients and sharp gradients for generating spin magnetization by electric fields and for ballistic spin transport is clarified.