Influence of Grain size on the Electrical Properties of ${\rm Sb_2Te_3}$ Polycrystalline Films

TL;DR

This study investigates how grain size influences the electrical resistance and conduction mechanisms in vacuum-deposited ${ m Sb_2Te_3}$ polycrystalline films, revealing dependencies on microstructural features.

Contribution

It provides new insights into the relationship between grain size, inter-granular voids, and electrical properties in ${ m Sb_2Te_3}$ films.

Findings

Resistance depends on grain size and voids

Charge carriers cross voids via ohmic conduction

Barrier height varies with grain structure

Abstract

Resistance of vacuum deposited ${\rm Sb_2Te_3}$ films of thickness between 100-500nm has been measured in vacuum. It is found that the resistance of the polycrystalline films strongly depends on the grain size and inter-granular voids. The charge carrier are shown to cross this high resistivity inter- granular void by ohmic conduction. The barrier height as well as temperature coefficient of resistance are also shown to depend on the grain size and inter- grain voids.