MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
B.J. Kowalski, I.A. Kowalik, R.J. Iwanowski, E. Lusakowska, M., Sawicki, J. Sadowski, I. Grzegory, S. Porowski
TL;DR
This study investigates the growth, morphology, and electronic structure of MnAs overlayers on GaN(0001) surfaces, revealing grain formation and valence band electronic changes through in situ spectroscopy.
Contribution
It provides new insights into the growth behavior and electronic properties of MnAs on GaN, using in situ resonant photoemission spectroscopy.
Findings
Spontaneous grain formation during MnAs growth
Valence band density of states changes with layer thickness
Electronic structure characterized in situ
Abstract
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy. Density of the valence band states of MnAs and its changes due to increase of the layer thickness were revealed.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · ZnO doping and properties