Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
B.J. Kowalski, I.A. Kowalik, R.J. Iwanowski, J. Sadowski, J. Kanski,, B.A. Orlowski, J. Ghijsen, F. Mirabella, E. Lusakowska, P. Perlin, S., Porowski, I. Grzegory, M. Leszczynski
TL;DR
This study investigates the surface and electronic properties of MOCVD-grown GaInN layers using UV and X-ray photoelectron spectroscopies, revealing In-related features and surface stability after ion etching.
Contribution
It provides detailed analysis of the surface composition and electronic structure of GaInN layers, highlighting In-related features and surface stability after ion sputtering.
Findings
In-related feature at valence band edge identified
Surface remains chemically stable after ion etching
Clean (0001)-(1x1) surface prepared successfully
Abstract
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, which can be ascribed to the presence of In in the layer, has been revealed. A clean (0001)-(1x1) surface was prepared by argon ion sputtering and annealing. Stability of chemical composition of the investigated surface subjected to similar ion etching was proven by means of X-ray photoemission spectroscopy.
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