Carrier Concentration Dependencies of Magnetization & Transport in Ga1-xMnxAs1-yTey
M.A. Scarpulla, K.M. Yu, W. Walukiewicz, O.D. Dubon
TL;DR
This study explores how Te donor compensation affects the magnetization and transport properties of Ga1-xMnxAs, revealing a metal-insulator transition linked to changes in magnetic behavior and temperature dependence.
Contribution
It demonstrates the impact of Te compensation on the metal-insulator transition and magnetic properties in Ga1-xMnxAs using ion implantation and pulsed-laser melting techniques.
Findings
Te compensation induces a metal-insulator transition.
Magnetization is enhanced at low temperatures near the transition.
Temperature dependence of magnetization shifts from concave to convex.
Abstract
We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system through a metal-insulator transition (MIT). This MIT is associated with enhanced low-temperature magnetization and an evolution from concave to convex temperature-dependent magnetization.
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