Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
C. Gould (1), C. R\"uster (1), T. Jungwirth (2,3,4), E. Girgis (1), G., M. Schott (1), R. Giraud (1), K. Brunner (1), G. Schmidt (1), and L.W., Molenkamp (1) ((1) Universit\"at W\"urzburg, Germany, (2) Institut of Physics, of Czech Republic, (3) University of Nottingham, UK
TL;DR
This paper introduces a novel spintronics device that exhibits a spin-valve like magnetoresistance effect using only a single ferromagnetic layer, leveraging strong spin-orbit coupling and anisotropic density of states.
Contribution
It demonstrates a new class of devices where magnetoresistance arises from intrinsic properties of a single ferromagnetic layer, not from multiple magnetic layers or spin injection.
Findings
Observation of spin-valve like effect in a single-layer device
Magnetoresistance driven by anisotropic density of states
Effect linked to magnetization reversal process in (Ga,Mn)As
Abstract
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material.
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