Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface

TL;DR

This paper explores the formation of fractal self-assembled nanostructures on monocrystalline silicon surfaces through controlled boron diffusion, revealing quantum wells and microdefect alloys influenced by oxide layer thickness.

Contribution

It introduces a novel method of creating fractal self-assembled nanostructures on silicon via short-time boron diffusion and oxide layer manipulation.

Findings

Formation of silicon quantum wells with microdefect alloys

Self-assembly of microcavities influenced by oxide thickness

Passivation of alloys during diffusion process

Abstract

We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the n-type Si(100) wafers. The diffusion profiles of this art are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the alloys of microdefects, which are produced by previous oxidation. These alloys appear to be passivated during short-time diffusion of boron thereby forming neutral del'ta barriers. The fractal type self-assembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which causes the system of microcavities embedded in the quantum well plane.