Stabilization of amorphous GaN by oxygen
F. Budde, B.J. Ruck, A. Koo, S. Granville, H.J. Trodahl (1), A., Bittar, G.V.M. Williams (2), M.J. Ariza (3), B. Bonnet, D.J. Jones (4), J.B., Metson (5), S. Rubanov, P. Munroe (6) ((1) Victoria University of Wellington,, New Zealand (2) Industrial Research Ltd.
TL;DR
This study explores how oxygen incorporation stabilizes amorphous GaN films grown via ion assisted deposition, revealing that oxygen content prevents crystallization and influences bonding structure.
Contribution
It demonstrates that oxygen incorporation at 15% or more stabilizes amorphous GaN, providing insights into bonding and structural stability not previously understood.
Findings
Amorphous GaN forms only with ≥15% oxygen incorporation.
Oxygen stabilizes amorphous structure by altering bonding.
Stoichiometric GaN consists of quasicrystalline nanodomains.
Abstract
Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Semiconductor materials and devices · Thin-Film Transistor Technologies