Spatial inhomogeneity and strong correlation physics: a dynamical mean field study of a model Mott-insulator/band-insulator heterostructure

TL;DR

This study uses dynamical mean field theory to explore how electronic correlations and inhomogeneity affect the properties of Mott-insulator/band-insulator heterostructures, revealing interface metallicity and correlation effects.

Contribution

It provides a detailed analysis of correlation evolution and optical conductivity in heterostructures with varying Mott-insulating layers using a dynamical mean field approach.

Findings

Heterostructures are generally metallic.

Moderately renormalized quasiparticle bands appear at interfaces.

Correlation effects vary with layer number and position.

Abstract

We use the dynamical mean field method to investigate electronic properties of heterostructures in which finite number of Mott-insulator layers are embedded in a spatially infinite band-insulator. The evolution of the correlation effects with the number of Mott insulating layers and with position in the heterostructure is determined, and the optical conductivity is computed. It is shown that the heterostructures are generally metallic, with moderately renormalized bands of quasiparticles appearing at the interface between the correlated and uncorrelated regions.