Observation of the Ettingshausen effect in quantum Hall systems

TL;DR

This study provides experimental evidence of the Ettingshausen effect in quantum Hall systems, revealing edge temperature differences influenced by current and magnetic field directions, aligning with recent theoretical predictions.

Contribution

First experimental observation of the Ettingshausen effect in quantum Hall systems, confirming theoretical models of edge electron temperature differences.

Findings

Asymmetric resistance behaviors indicate edge electron temperature differences.

Electron temperature difference depends on current direction and magnetic field polarity.

Results support the recent theoretical framework by Akera.

Abstract

Evidence of the Ettingshausen effect in the breakdown regime of the integer quantum Hall effect has been observed in a GaAs/AlGaAs two-dimensional electron system. Resistance of micro Hall bars attached to both edges of a current channel shows remarkable asymmetric behaviors which indicate an electron temperature difference between the edges. The sign of the difference depends on the direction of the electric current and the polarity of the magnetic field. The results are consistent with the recent theory of Akera.