Arrays of widely spaced atomic steps on Si(111) mesas due to sublimation

TL;DR

This study investigates the formation and distribution of wide-spaced atomic steps on Si(111) mesas during sublimation, combining experiments with BCF theory simulations to understand self-organization processes.

Contribution

It introduces a detailed analysis of step formation on Si(111) mesas due to sublimation, integrating experimental observations with BCF theory simulations for the first time.

Findings

Wide step spacings form due to sublimation-induced processes.

Step distributions depend on sublimation rate, step interactions, and atom exchange.

Self-organization leads to low-density step arrangements.

Abstract

Steps with spacings of microns form on top of mesas fabricated on Si(111) that is annealed at temperatures where sublimation becomes important. Upon annealing, mesas first develop ridges along their edges, effectively creating craters which then become step-free by a step flow process described in the literature. Due to the miscut of the average surface from (111), ridge breakdown occurs on one edge of each mesa as sublimation proceeds. The breakdown point then acts as a source of steps which spread out over the mesa surface. The distribution of steps in the resulting step train depends on the sublimation rate, direct step-step interaction and the diffusive exchange of atoms among the steps. Computer simulations using BCF (Burton, Cabrera and Frank) theory provide insight into the controlling processes. The results suggest that self-organization of the wide terrace distributions in the low step density area occurs under sublimation. We compare the experimental and predicted step distributions.