Electronic structures of B-2p and C-2p of boron-doped diamond film by soft X-ray absorption and emission spectroscopy
Jin Nakamura, Eiki Kabasawa, Nobuyoshi Yamada, Yasuaki Einaga, Daisuke, Saito, Hideo Isshiki, Shigemi Yugo, Rupert C.C. Perera

TL;DR
This study uses soft X-ray absorption and emission spectroscopy to analyze the electronic structures of boron-doped diamond films, revealing details about impurity states, hybridization, and the effects of doping on electrical properties.
Contribution
It provides detailed spectroscopic insights into the electronic states of B- and C-doped diamond films, highlighting the nature of impurity levels and boron site occupancy.
Findings
Boron induces impurity states near the Fermi level.
Boron atoms mainly occupy substitutional sites in diamond.
Electronic structure changes correlate with electrical properties.
Abstract
X-ray absorption (XAS) and emission (XES) spectroscopy near B-K and C-K edges have been performed on metallic (~1at%B, B-diamond) and semiconducting (~0.1at%B and N, BN-diamond) doped-diamond films. Both B-K XAS and XES spectra shows metallic partial density of state (PDOS) with the Fermi energy of 185.3 eV, and there is no apparent boron-concentration dependence in contrast to the different electric property. In C-K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of non-doped diamond, E_V, 283.9 eV. C-K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep-and-broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy (E_a=0.37 eV) estimated from the temperature dependence of the…
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