Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures

TL;DR

This paper reports the discovery of zero-resistance states in high-mobility GaAs/AlGaAs heterostructures induced by microwave electromagnetic waves at low magnetic fields, revealing new quantum transport phenomena.

Contribution

It demonstrates the induction of zero-resistance states by electromagnetic waves in heterostructures, a novel observation at low magnetic fields and large filling factors.

Findings

Zero-resistance states occur near specific magnetic field ratios.

The effect depends on microwave frequency, temperature, and power.

Vanishing resistance observed at certain magnetic field conditions.

Abstract

We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, $B$, in the large filling factor limit. Vanishing resistance is observed in the vicinity of $B = [4/(4j+1)] B_{f}$, where $B_{f} = 2\pi\textit{f}m^{*}/e$, where m$^{*}$ is the effective mass, e is the charge, and \textit{f} is the microwave frequency. The dependence of the effect is reported as a function of \textit{f}, the temperature, and the power.