Wetting Phase Transition at the Surface of Liquid Ga-Bi alloys: An X-ray Reflectivity Study
Holger Tostmann (1), Oleg Shpyrko (2), Peter S. Pershan (1, 2), Elaine, Dimasi (3), Ben Ocko (3), Moshe Deutsch (4) ((1) Division of Engineering, and Applied Sciences, Harvard University, Cambridge, Massachusetts, USA (2), Department of Physics, Harvard University, Cambridge

TL;DR
This study uses X-ray reflectivity to investigate surface structural changes in liquid Ga-Bi alloys across the monotectic temperature, revealing a wetting film with unexpected properties.
Contribution
It provides the first detailed structural characterization of the wetting transition at the surface of liquid Ga-Bi alloys using high-resolution X-ray reflectivity.
Findings
Presence of a Bi monolayer at all temperatures.
Formation of a thick, Bi-rich wetting film above the monotectic temperature.
Observation of a concentration gradient within the wetting film.
Abstract
X-ray reflectivity measurements of the binary liquid Ga-Bi alloy reveal a dramatically different surface structure above and below the monotectic temperature C. A Gibbs-adsorbed Bi monolayer resides at the surface at both regimes. However, a 30 {\AA} thick, Bi-rich wetting film intrudes between the Bi monolayer and the Ga-rich bulk for . The internal structure of the wetting film is determined with {\AA} resolution, showing a theoretically unexpected concentration gradient and a highly diffuse interface with the bulk phase.
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