Spin characterization and control over the regime of radiation-induced zero-resistance states

TL;DR

This paper introduces methods to characterize and control electron and nuclear spins in radiation-induced zero-resistance states using low magnetic field techniques, enabling advanced spin detection and manipulation in high mobility GaAs/AlGaAs systems.

Contribution

It presents a novel approach to detect and control spins in zero-resistance states through adapted quantum-Hall-limit techniques and analyzes spin splitting via observed beats in magnetoresistance.

Findings

Electrical detection of electron and nuclear magnetic resonance in zero-resistance states.

Measurement and control of zero-field spin splitting using magnetoresistance beats.

Development of a low magnetic field analog for spin characterization.

Abstract

Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low magnetic field analog of quantum-Hall-limit techniques for the electrical detection of electron spin- and nuclear magnetic- resonance, dynamical nuclear polarization via electron spin resonance, and electrical characterization of the nuclear spin polarization via the Overhauser shift. In addition, beats observed in the radiation-induced oscillatory-magnetoresistance are developed into a method to measure and control the zero-field spin splitting due to the Bychkov-Rashba and bulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.