Effect of an InP/In$_{0.53}$Ga$_{0.47}$As Interface on Spin-orbit Interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As Heterostructures

TL;DR

This study investigates how inserting an InP/InGaAs interface affects Rashba spin-orbit interaction in InAlAs/InGaAs heterostructures, revealing interface-induced modifications in spin splitting and comparing experimental results with theoretical models.

Contribution

It provides new insights into the influence of InP interfaces on spin-orbit coupling in InGaAs quantum wells, combining experimental measurements with theoretical analysis.

Findings

InP interface alters Rashba spin-orbit interaction in heterostructures.

Experimental results show enhancement or reduction of spin-orbit coupling depending on doping.

Comparison with $ extbf{k} extbf{·} extbf{p}$ theory highlights interface effects on spin splitting.

Abstract

We report the effect of the insertion of an InP/In$_{0.53}$Ga$_{47}$As Interface on Rashba spin-orbit interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In$_{0.53}$Ga$_{47}$As well, the overall values of the spin-orbit coupling constant $\alpha$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $\mathbf{k\cdot p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.