Shot noise in resonant tunneling through an interacting quantum dot with intradot spin-flip scattering

TL;DR

This paper provides a theoretical analysis of shot noise in electron tunneling through an interacting quantum dot with spin-flip scattering, revealing how lead polarization and spin-flip processes influence noise characteristics.

Contribution

It introduces a generalized quantum rate equation approach incorporating coherent superpositions to analyze shot noise in spin-dependent quantum dot transport.

Findings

Fano factor increases with lead polarization

Fano factor decreases with intradot spin-flip scattering

Provides insights into noise behavior in spintronic quantum dots

Abstract

In this paper, we present theoretical investigation of the zero-frequency shot noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with possibility of spin-flip scattering between the two spin states by means of the recently developed bias-voltage and temperature dependent quantum rate equations. For this purpose, a generalization of the traditional generation-recombination approach is made for properly taking into account the coherent superposition of electronic states, i.e., the nondiagonal density matrix elements. Our numerical calculations find that the Fano factor increases with increasing the polarization of the two leads, but decreases with increasing the intradot spin-flip scattering.