Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

TL;DR

This paper shows that in situ post-growth annealing of GaMnAs under As capping can effectively increase its Curie temperature, offering an alternative to traditional ex situ annealing methods.

Contribution

It introduces in situ annealing under As capping as a viable method to enhance Tc in GaMnAs, matching the effectiveness of ex situ techniques.

Findings

In situ annealing under As capping achieves high Tc in GaMnAs.

In situ process is comparable to ex situ annealing in effectiveness.

Method simplifies the annealing process for GaMnAs.

Abstract

We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.