Photoluminescence Spectroscopy of many-body Effects in Heavily Doped Al$_x$Ga$_{1-x}$As
Subhasis Ghosh, Niladri Sarkar

TL;DR
This study uses photoluminescence spectroscopy to explore many-body effects like band gap narrowing and Fermi edge singularity in heavily doped Al$_x$Ga$_{1-x}$As, revealing how electron concentration and temperature influence these phenomena.
Contribution
It provides experimental evidence of many-body effects in heavily doped Al$_x$Ga$_{1-x}$As and highlights the role of nonequilibrated holes in enhancing FES-like features.
Findings
FES-like feature grows with increasing electron concentration.
FES-like feature is nonmonotonic with temperature and excitation intensity.
Small concentration of nonequilibrated holes enhances FES-like features.
Abstract
We present an experimental investigation of heavy doping-induced many-body effects such as band gap narrowing(BGN) and Fermi edge singularity(FES) in AlGaAs using photoluminescence(PL) spectroscopy. The band-to-band transition energy shifts to lower energies and FES-like feature in PL spectra grows with increasing electron concentration. We show that FES-like feature is a nonmonotonic function of temperature and excitation intensity. Our data lead us to suggest that a small concentration of nonequilibrated holes is required to enhance the FES-like feature in the PL spectra.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Surface and Thin Film Phenomena · Electronic and Structural Properties of Oxides
