Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

TL;DR

This paper reports the development of advanced carbon nanotube transistors with near-ballistic transport, self-aligned structures, and high-performance materials, providing new insights into nanoscale electronic transport mechanisms.

Contribution

It introduces self-aligned ballistic nanotube transistors with optimized materials and structures, achieving near-ballistic transport and revealing fundamental scattering mechanisms.

Findings

Transistors with channels down to 50 nm exhibit near-ballistic transport.

ALD high-k films interact with nanotubes without inducing localization at 4 K.

New understanding of ballistic transport and phonon scattering in nanotubes.

Abstract

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.