Shot Noise in Linear Macroscopic Resistors

TL;DR

This paper provides experimental evidence of shot noise in macroscopic resistors, showing it arises from charge carrier fluctuations without needing potential barriers or inelastic scattering.

Contribution

It demonstrates shot noise in linear macroscopic resistors due to carrier number fluctuations, challenging previous assumptions about its origins.

Findings

Shot noise observed in macroscopic resistors.

Shot noise linked to carrier number fluctuations.

Potential barriers are not necessary for shot noise.

Abstract

We report on a direct experimental evidence of shot noise in a linear macroscopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffusive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. Present results show that neither potential barriers nor the absence of inelastic scattering are necessary to observe shot noise in electronic devices.