Thick MgB2 film with (101) oriented micro-crystals

TL;DR

This paper reports the successful growth of a very thick, highly textured MgB2 film with (101) orientation on Al2O3, exhibiting properties similar to single crystals, using HPCVD technique.

Contribution

It demonstrates the fabrication of a thick, highly oriented MgB2 film with excellent crystallinity and transport properties, advancing thin film superconductor technology.

Findings

The film is approximately 40 μm thick with (101) orientation.

Transport properties are comparable to single crystal MgB2.

The film exhibits a sharp superconducting transition at around 39 K.

Abstract

Very thick, ~ 40 $\mu$m, clean, and highly textured MgB2 film was effectively grown on an Al2O3 substrate. The fabrication technique is by the hybrid physical-chemical vapor deposition (HPCVD) using B2H6 gas and Mg ingot as the sources. The X-ray diffraction (XRD) analysis shows a highly (101)-oriented MgB2 crystal structure without any impurity detected. There is no signal from the substrate in the XRD spectrum, indicating that the film thickness exceeds the X-ray penetration length. Scanning electron microscopy (SEM) reveals that the film is composed of highly-packed MgB2 micro-crystals with a uniform size distribution of about 2 $\mu$m in diameter and 0.2 $\mu$m in thickness. According to the compositional analysis of energy-dispersive X-ray spectroscopy (EDX), no oxygen, hence no MgO, exists in the textured film, consistent with the XRD result. Also, the transport properties are similar to those of a single crystal, indicating a clean film of good crystallite. The zero field transition temperatures are determined as TC(onset) = 39.2 K and TC(zero) = 38.4 K, giving a sharp transition typical of a clean sample. The residual resistivity ratio (RRR) is determined as 6.4 and the magnetoreisitance (MR) is about 28 % at 40 K under the applied field of 9 T, which are similar to those of a single crystal. The zero temperature upper critical field, HC2(0), is extrapolated as 19 T from the TC(onset) at applied field up to 9 T.