Negative Magnetoresistance in (In,Mn)As

TL;DR

This study investigates the magnetotransport properties of (In,Mn)As thin films, revealing negative magnetoresistance at low temperatures and modeling spin scattering effects, contributing to understanding magnetic semiconductors.

Contribution

First detailed measurement of magnetoresistance in (In,Mn)As thin films, demonstrating negative magnetoresistance and applying the Khosla-Fischer model to impurity band spin scattering.

Findings

Negative magnetoresistance observed below 17 K

Hysteresis in magnetoresistance at 5 K

Magnetoresistance described by Khosla-Fischer model

Abstract

The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90 ohm-cm to 0.05 ohm-cm. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below 17 K with a hysteresis in the magnetoresistance observed at 5 K. The magnetoresistance as a function of applied field was described by the Khosla-Fischer model for spin scattering of carriers in an impurity band.