Spin injection in spin FETs using a step-doping profile
Min Shen, Semion Saikin, Ming-Cheng Cheng
TL;DR
This paper studies how a step-doping profile at the metal/semiconductor interface in spin FETs can enhance spin injection efficiency, showing increased spin flux with minimal polarization variation.
Contribution
It introduces a Monte Carlo model to analyze the impact of step-doping on spin injection, highlighting the role of doping in optimizing spin current in spin FETs.
Findings
Spin flux is proportionally increased with total current.
Spin polarization variation remains below 20%.
Step-doping enhances tunneling current and spin injection.
Abstract
We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.
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