Langevin Approach to Understand the Noise of Microwave Transistors

TL;DR

This paper introduces a Langevin-based method to analyze microwave transistor noise, deriving a stochastic integral equation for output voltage and validating it with experimental data, offering a comprehensive understanding of noise behavior.

Contribution

It presents a novel Langevin approach that models noise in microwave transistors using stochastic processes within an equivalent circuit framework.

Findings

Accurately predicts noise figure across 6-18 GHz range.

Matches experimental data within typical uncertainty.

Provides detailed insight into noise phenomena.

Abstract

A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a stochastic integral equation for the output voltage is derived and from its power spectrum the noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from 6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental determination. The approach allows to extract all the information required for understanding the noise performance of the device without any restriction on the statistics of the noise sources. The results show the relevant noise phenomena from a new angle.