Spin-splitting in the quantum Hall effect of disordered GaAs layers with strong overlap of the spin subbands

TL;DR

This paper reports the observation of spin-splitting in the quantum Hall effect of heavily doped GaAs layers with low mobility, explained by a scaling theory applied to overlapping spin subbands despite small splitting.

Contribution

It demonstrates spin-splitting in disordered GaAs layers with overlapping spin subbands, extending understanding of quantum Hall effects in low-mobility, heavily doped semiconductors.

Findings

Spin-splitting observed despite small energy difference.

Scaling theory explains experimental results.

Spin subbands can be treated independently.

Abstract

With minima in the diagonal conductance G_{xx} and in the absolute value of the derivative |dG_{xy}/dB| at the Hall conductance value G_{xy}=e^{2}/h, spin-splitting is observed in the quantum Hall effect of heavily Si-doped GaAs layers with low electron mobility 2000 cm^2/Vs in spite of the fact that the spin-splitting is much smaller than the level broadening. Experimental results can be explained in the frame of the scaling theory of the quantum Hall effect, applied independently to each of the two spin subbands.