Anisotropy of Resonant Inelastic X-Ray Scattering at the K Edge of Si:Theoretical Analysis

TL;DR

This paper provides a theoretical analysis of the anisotropic resonant inelastic x-ray scattering spectra at the silicon K edge, explaining experimental observations through ab initio calculations and systematic parameter variation.

Contribution

It offers a quantitative theoretical explanation for the anisotropic RIXS spectra at the Si K edge, confirming experimental findings.

Findings

Confirmed anisotropy of RIXS spectra at Si K edge

Provided quantitative agreement with experimental data

Analyzed effects of transfered-momenta, photon energy, and polarization

Abstract

We investigate theoretically the resonant inelastic x-ray scattering (RIXS) at the $K$ edge of Si on the basis of an ab initio calculation. We calculate the RIXS spectra with systematically varying transfered-momenta, incident-photon energy and incident-photon polarization. We confirm the anisotropy of the experimental spectra by Y. Ma {\it et al}. (Phys. Rev. Lett. 74, 478 (1995)), providing a quantitative explanation of the spectra.