Current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction

TL;DR

This paper demonstrates current-induced magnetization reversal in a (Ga,Mn)As-based magnetic tunnel junction, revealing asymmetric magneto-resistance and the role of spin-polarized tunneling currents in the process.

Contribution

It reports the first observation of current-induced magnetization reversal in a ferromagnetic semiconductor tunnel junction with detailed analysis of spin-polarized contributions.

Findings

Magneto-resistance change is asymmetric with current direction.

Partial magnetization reversal occurs in the (Ga,Mn)As layer.

Spin-polarized tunneling current of 10^5 A/cm^2 induces reversal.

Abstract

We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.