An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve

TL;DR

This paper reports the first room-temperature observation of current-induced magnetization switching in exchange-biased spin-valves, demonstrating that inserting a Ruthenium layer significantly reduces the critical current density needed for switching.

Contribution

It introduces a Ru layer insertion technique that effectively lowers the critical current for magnetization switching in exchange-biased spin-valves, advancing spintronic device efficiency.

Findings

Ru layer insertion reduces critical current density

Inverse CIMS observed with thicker free layer

Room-temperature CIMS demonstrated in ESPVs

Abstract

Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.