Fermi surface evolution in the antiferromagnetic state for the electron-doped t-t'-t''-J model
Qingshan Yuan, Yan Chen, T. K. Lee, C. S. Ting

TL;DR
This study uses a slave-boson mean-field approach to analyze how the Fermi surface evolves with doping in the electron-doped t-t'-t''-J model's antiferromagnetic state, aligning well with experimental observations.
Contribution
It provides a detailed theoretical analysis of Fermi surface evolution in the electron-doped t-t'-t''-J model using the slave-boson mean-field method, matching experimental findings.
Findings
Fermi surface pockets appear around (±π,0) and (0,±π) at low doping.
Additional Fermi surface pockets form around (±π/2, ±π/2) with increased doping.
The spectral weight evolution agrees with experimental data.
Abstract
By use of the slave-boson mean-field approach, we have studied the electron-doped t-t'-t''-J model in the antiferromagnetic (AF) state. It is found that at low doping the Fermi surface (FS) pockets appear around and , and upon increasing doping the other ones will form around . The evolution of the FS with doping as well as the calculated spectral weight are consistent with the experimental results.
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